Autors: Cholakova, I. N., Takov, T. B., Tzanova, S. S., Tsankov R. Ts., Simonne N.
Title: Design and Investigation of 0.18µm CMOS Hall Sensors with different dimensions
Keywords: Horizontal Hall microsensors, offset compensation, voltage related sensitivity, current related sensitivity, 0.18µm CMOS technology

Abstract: Horizontal CMOS Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are designed and characterized. The influence of the geometry of the Hall cells is analyzed and how it affects the offset, the Hall voltage and the sensitivity of the devices. Experimental results for the parameters of interest are given for three different sizes, designed in 0.18µm CMOS technology, using certain biasing voltages. The purpose is the best Hall cell dimensions to be selected.

References

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    Copyright 2013 by IEEE, issue 13, pp. 956-960, 2013, South Africa, IEEE, ISBN 978-1-4673-4568-2

    Copyright IEEE

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    Вид: публикация в международен форум, публикация в реферирано издание