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Autors: Mladenov, V. M., Kirilov S.M.
Title: Analysis of the mutual inductive and capacitive connections and tolerances of memristor’s parameter’s of a memristor memory matrix
Keywords: titanium-dioxide memristor; parasitic parameters; mutual inductance; memristor characteristics

Abstract: In this paper the mutual inductive and capacitive connections and tolerances of memristor’s parameter’s of a memristor memory matrix is investigated. An equivalent circuit of three neighboring memristors of a memory matrix with complicated mutual capacitive and inductive connection is presented. Then the memristor’s own parasitic capacitance and inductance are described. The mutual capacitances between the rims of the memory matrix are calculated. Two possible values of the coefficient of magnetic coupling between the memristors are used. A SIMULINK model of the circuit of three neighboring memristors is developed. The simulation is made at pulse mode with 3 GHz actuating voltages. The main result is that the parasitic parameters do not strongly affect the memristor voltage drops at frequencies up to 3 GHz. However the tolerances of the memristor parameters have stronger effect on the circuit characteristics. Finally, some concluding remarks associated with the magnetic and capacitive

References

    Issue
    European Conference on Circuit Theory and Design (ECCTD) 2013, 2013, Germany,

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    Вид: публикация в международен форум

    Въведена от: проф. д-р Валери Марков Младенов