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Autors: Mladenov, V. M., Kirilov S.M.
Title: Analysis of temperature influence on titaniumdioxide memristor characteristics at pulse mode
Keywords: titanium-dioxide memristor;charge carriers mobility; temperature dependence; impulse mode; diffusion

Abstract: The main goal of this paper is to investigate the influence of the temperature on the memristor properties and on the inner diffusion rate. Based on experimental data  relationship between ionic mobility and temperature is extrapolated. Then the dependencies between resistances of the memristor in open and closed states and the temperature are given in analytical and graphical form. Based on a SIMULINK algorithm the temperature dependence of maximal quantity of charge memorized is given,. The influence of the temperature on memristor characteristics are presented using MATLAB models in pulse mode. The diffusion processes in Williams’s memristor are analyzed. In the end some concluding remarks about the complex influence of temperature on Williams’s memristor are presented.

References

    Issue
    International Symposium on Theoretical Electrical Engineering (ISTET) 2013, 2013, Czech Republic,

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    Вид: публикация в международен форум, публикация в реферирано издание

    Въведена от: проф. д-р Валери Марков Младенов