Autors: Mladenov, V. M., Kirilov S.M.
Title: Analysis of temperature influence on titaniumdioxide memristor characteristics at pulse mode
Keywords: titanium-dioxide memristor;charge carriers mobility; tempera

Abstract: The main goal of this paper is to investigate the influence of the temperature on the memristor properties and on the inner diffusion rate. Based on experimental data  relationship between ionic mobility and temperature is extrapolated. Then the dependencies between resistances of the memristor in open and closed states and the temperature are given in analytical and graphical form. Based on a SIMULINK algorithm the temperature dependence of maximal quantity of charge memorized is given,. The influence of the temperature on memristor characteristics are presented using MATLAB models in pulse mode. The diffusion processes in Williams’s memristor are analyzed. In the end some concluding remarks about the complex influence of temperature on Williams’s memristor are presented.

References

    Issue

    International Symposium on Theoretical Electrical Engineering (ISTET) 2013, 2013, Czech Republic,

    Full text of the publication

    Цитирания (Citation/s):
    1. Nafea, Sherif F., Ahmed AS Dessouki, and S. El-Rabaie. "Memristor Overview up to 2015." Menoufia Journal of Electronic Engineering Research 24, no. 1 (2015): 79-106. - 2015 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
    2. Ammula, Haritha, Bhavani Prasad, and Venkata Lakshmi. "Mathematical Modelling and Analysis of Memristors with and without its Temperature Effects." International Journal of Electronics and Telecommunications 63, no. 2 (2017): 181-186. - 2017 - в издания, индексирани в Scopus или Web of Science
    3. Dubey, Shashank Kumar, Akhil Reddy, Rashi Patel, Master Abz, Avireni Srinivasulu, and Aminul Islam. "Architecture of resistive RAM with write driver." Solid State Electronics Letters 2 (2020): 10-22. - 2020 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
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