Autors: Pashev A., Gaydazhiev D., Angelov, G. V., Uzunov, I. S.
Title: Study of the Electrical Properties of CNTFETs Based on Computer Simulations
Keywords: Carbon nanotubes (CNT), graphene, CNTFET, device modeling, tight-binding model

Abstract: The paper reviews two approximations for energy level calculation based on the tight-binding model. Basic static and dynamic characteristics of CNTFET with doped source/drain area are performed using the Stanford University CNTFET model. The dependence of the output characteristics from the device geometry is given. An estimation of the transit frequency shows that the device can operate in the multi-GHz range.

References

    Issue

    Proceedings of the 22nd International Scientific and Applied Science Conference "ELECTRONICS ET'2013", pp. 41-44, 2013, Bulgaria, ISSN 1313-1842

    Full text of the publication

    Вид: публикация в национален форум с межд. уч., публикация в реферирано издание