|Autors: Pashev A., Gaydazhiev D., Angelov, G. V., Uzunov, I. S.|
Title: Study of the Electrical Properties of CNTFETs Based on Computer Simulations
Keywords: Carbon nanotubes (CNT), graphene, CNTFET, device modeling, tight-binding model
Abstract: The paper reviews two approximations for energy level calculation based on the tight-binding model. Basic static and dynamic characteristics of CNTFET with doped source/drain area are performed using the Stanford University CNTFET model. The dependence of the output characteristics from the device geometry is given. An estimation of the transit frequency shows that the device can operate in the multi-GHz range.
Full text of the publication
Вид: публикация в национален форум с межд. уч., публикация в реферирано издание