Autors: Angelov, G. V., Bonev N., Rusev, R. P., Hristov, M. H.
Title: Surface Potential Model of a High-k HfO2-Ta2O5 Capacitor
Keywords: Device modeling, compact models, PSP, circuit simulation, high-k gate dielectric, Verilog-A, Spectre

Abstract: A compact model of a MOS capacitor with high-k HfO2–Ta2O5 mixed layer stack is developed in Matlab. Model equations are based on the surface potential description of PSP model. After fitting the C–V characteristics in Matlab the model is coded in Verilog-A hardware description language to interface with Spectre circuit simulator within Cadence CAD system. The results are validated against experimental measurements of high-k dielectric structure.

References

    Issue

    Proceedings of the 19th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES 2012), pp. 386-391, 2012, Poland, ISBN 978-83-62954-43-8

    Copyright IEEE Xplore

    Full text of the publication

    Цитирания (Citation/s):
    1. N. Bonev, H. Hristov and M. Hristov, "Mechanical stress impact on CMOS low supply voltage bangap reference circuit," 2016 International Semiconductor Conference (CAS), Sinaia, Romania, pp. 133-136 (2016). DOI: 10.1109/SMICND.2016.7783063 - 2016 - в издания, индексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus