|Autors: Angelov, G. V.|
Title: Compact model of HfO2-Ta2O5 capacitor in Verilog-A
Keywords: Compact model, high-k gate dielectric, Verilog-A
Abstract: A circuit simulation compact model of a MOS capacitor made of high-k HfO2–Ta2O5 stack layers is coded in Verilog-A. The model is based on the BSIM3v3 core. C–V and I–V characteristics are simulated in Cadence Spectre circuit simulator and validated against experimental measurements of the HfO2–Ta2O5 stack structure.
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