Autors: Angelov, G. V.
Title: Compact model of HfO2-Ta2O5 capacitor in Verilog-A
Keywords: Compact model, high-k gate dielectric, Verilog-A

Abstract: A circuit simulation compact model of a MOS capacitor made of high-k HfO2–Ta2O5 stack layers is coded in Verilog-A. The model is based on the BSIM3v3 core. C–V and I–V characteristics are simulated in Cadence Spectre circuit simulator and validated against experimental measurements of the HfO2–Ta2O5 stack structure.



    Journal of Electronics, vol. 5, issue 2, pp. 139-142, 2011, Bulgaria, ISSN 1313-1842

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