Autors: Angelov, G. V., Hristov, M. H.
Title: SPICE Modeling of MOSFETs in Deep Submicron
Keywords: SPICE models; MOSFET; device modeling; compact modeling

Abstract: As the mainstream MOS technology is scaling into nanometer sizes, the development of physical and predictive models for circuit simulation that cover geometry, bias, temperature, DC, AC, RF, and noise characteristics becomes a major goal. The paper addresses the scaling, trends and their limiting factors and follows through the evolution of the three MOSFET model generations of SPICE: from the Berkeley Levels 1, 2, 3 to the latest BSIM3v3, BSIM4, MM11, EKV, and SP2001. MOSFET models are examined, emphasizing device physics and mathematical techniques for numerical calculation. https://ieeexplore.ieee.org/document/1490430

References

    Issue

    Proceedings of the 27th International Spring Seminar on Electronics Technology (ISSE 2004), 2004, Bulgaria, DOI 10.1109/ISSE.2004.1490430

    Copyright IEEE Xplore

    Full text of the publication

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    Вид: пленарен доклад в международен форум, публикация в реферирано издание, индексирана в Scopus