|Autors: Hristov, M. H., Angelov, G. V.|
Title: SPICE Models for MOSFETs: Towards the Nanotechnology Era
Keywords: SPICE, MOSFETs, device models, simulations, nanotechnology
Abstract: The paper follows through the evolution of SPICE models for MOSFETs p lacing the emphasis upon the latest compact model generation (BSIM3v3, BSIM4, MM11, EKV, SP). The MOSFET models are examined following the trend of shrinking technology sizes, low voltage and low power design. The principles of the mainstream modeling approaches are outlined. Major physical effects arising from technology downscaling towards sub-100-nm and their implementation in the models are addressed. Comparison between models reviewed is provided as well as general comments for model applicability. The prospective directions of model developments have been pointed out.
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Вид: публикация в национален форум с межд. уч., публикация в реферирано издание