Autors: Szekeres, A., Alexandrova, S., Halova, E. Y., Gartner, M., Anastasescu, M., Stoica, M., Osiceanu, P., Marin, A.
Title: “Silicon nanoparticles formed in silicon oxуnitride by oxidation of plasma immersion N+ implanted silicon surface layer”
Keywords: nanoparticles , SiO x N y, plasma ion immersion , chemical bonds

Abstract: In this paper we demonstrate the possibility to create silicon nanoparticles by consecutive technological processes: plasma immersion implantation of N + ions into a shallow silicon surface region with low energy (2 keV) and ion fluences from 10 16 to 10 18 N + /cm 2 and high-temperature (1050 o C) thermal annealing in dry oxygen. The formed Si- based structures were examined by FTIR transmission spectroscopy, spectroscopic ellipsometry (SE) and X-ray photoelectron spectroscopy (XPS). Depending on N + fluence fine changes were detected caused by process induced Si lattice damage altering the surface smoothness, layer thickness and chemical bonding. The results from the FTIR spectra and infrared SE data are consistant pointing out to a tendency of increased SiO x N y and Si clusters formation. The presence of Si-N, Si-N-O and Si-Si chemical bonds is revealed in the obtained layers, identified as SiO x N y with considerably low N content with embedded Si nanoparticles. The process of cr

References

    Issue

    Nanoscience & Nanotechnology, vol. 13, pp. 41-44, 2013, Bulgaria,

    Вид: публикация в национален форум, публикация в реферирано издание