Детайли за публикацията
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Autors: Mladenov, V. M., Kirilov S.M.
Title: Investigation of memristors’ own parasitic parameters and mutual inductances between neighbouring elements of a memristor matrix and their influence on the characteristics
Keywords: titanium-dioxide memristor; parasitic parameters; mutual inductance; memristor characteristics

Abstract: The main purpose of the paper is to analyze the parasitic parameters and the mutual inductances between the neighboring memristors of a memristor memory matrix. An equivalent substituting circuit of two neighboring memristors with different parameters of a memristor memory matrix is given. Then the parasitic capacitance and inductance of a memristor are calculated. Three possible values of the coefficient of magnetic connection are used. A SIMULINK model of the circuit investigated is created. The basic relationships between the quantities in graphical form are presented. The main result is that the parasitic parameters do not strongly affect the memristor voltage drops at frequencies up to 2 GHz. In the end, some concluding remarks associated with the magnetic influence between the memristors of a memristor memory matrix are given.

References

    Issue
    International Symposium on Theoretical Electrical Engineering (ISTET) 2013, 2013, Czech Republic,

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    Вид: публикация в международен форум, публикация в реферирано издание

    Въведена от: проф. д-р Валери Марков Младенов