Autors: Spasova, M.L., Angelov, G. V., Hristov, M. H., Radonov, R. I., Rusev, R. P.
Title: Overview of Carbon Nanotube Field-Effect Transistors
Keywords: CNTFET, nanotube, nanowire, semiconductor quantum wires, car

Abstract: An overview of the different types of CNTFET which have large potential to semiconductor industry and microelectronic systems is presented. The present paper is focused on the structure of the various types of CNTFET and their technology characteristics depending on the specific CNT used: single-walled or multi-walled.

References

  1. Попов, А., „Полупроводникови материали и структури за наноелектрониката”, Университетско издателство ”Св. Климент Охридски” 2007. ISBN 978-954-07-2539-0
  2. Morinobu E., T. Hayashi, Y. Kim, and H. Muramatsu: „Development and Application of Carbon Nanotubes”, AAPPS Bulletin, pp. 1-11, Vol. 18, No. 1, February 2008.
  3. Busi, R., Swapna, P., Babu, K., Srinivasa, R., "Carbon Nanotubes Field Effect Transistors: A Review", International Journal of Electronics & Communication Technology, Vol.2, SP-1, Dec.2011, pp. 204-208
  4. Andrew, D., Ervin, М. "Effects of Differing Carbon Nanotube Field-effect Transistor Architectures",Army Research Laboratory, July 2009.
  5. Aikawa, S., Einarsson, E., Inoue, T., Xiang, R., Chiashi, S., Shiomi, J., Nishikawa, E., Maruyama , S. "Simple Fabrication Technique for Field-Effect Transistor Array Using As-Grown Single-Walled Carbon Nanotubes",Japanese Journal of Applied Physics 50 (2011), pp.04DN08(1-4)
  6. Derycke, V., Martel, R., Appenzeller, J., Avouris Ph.”Carbon Nanotube Inter- and Intramolecular Logic Gates” American Chemical Society, VOLUME 1, NUMBER 9, SEPTEMBER 2001, pp 452-456
  7. Lin, H., Park, Y., Tiwari, S. "A Compact Single-Walled Carbon Nanotube Transistor Integrated with a Silicon MOSFET Using a Single Common Gate", Materials Research Society 2007, Vol. 963
  8. Hu, Y., Yao, K., Wang, S., Zhang, Z., Liang, X., Chen, Q., Peng, L."Fabrication of high performance top-gate complementary inverter using a single carbon nanotube and via a simple process", American Institute of Physics, Applied Physics letters 90, 223116, 2007, pp. 223116 (1-3)
  9. Chen, Z., Farmer, D., Xu, S., Gordon, R., Avouris, P., Appenzeller, J. "Externally Assembled Gate-All-Around Carbon Nanotube Field-Effect Transistor",IEEE electron device letters, VOL. 29, NO. 2, February 2008 pp. 183-185
  10. Franklin, A., Sayer, R., Sands, T., Fisher, T., Janes, D.” Toward surround gates on vertical single-walled carbon nanotube devices” Mar/Apr 2009, American Vacuum Society, DOI: 10.1116/1.3054266, pp 821-826
  11. Stokes, P., Khondaker, S.” Local-gated single-walled carbon nanotube field effect transistors assembled by AC dielectrophoresis” University of Central Florida, Department of Physics, Orlando , USA
  12. Svensson, P., Tarakanov, T., Lee, D., Kinaret, K., Park, Y. Campbell. B.,”A carbon nanotube gated carbon nanotube transistor with 5 ps gate delay” IOP publishing, Online at stacks.iop.org/Nano/19/325201
  13. Chen, C., Xu, D., Kong, E., Zhang, Y., "Multichannel Carbon-Nanotube FETs and Complementary Logic Gates With Nanowelded Contacts", IEEE Electron Device Letters, Vol. 27, No. 10, October 2006, pp. 852-855
  14. Shun, M., Ganhua L., Kehan, Y., Junhong, Ch.,”Specific biosensing using carbon nanotubes functionalized with gold nanoparticle–antibody conjugates” Elsevier Ltd. All rights reserved, September 26, 2009, pp. 479–486

Issue

Nanoscience & Nanotechnology – Nanostructured materials application and innovation transfer, vol. 13, pp. 188 - 190, 2013, Bulgaria, ISSN 1313-8995

Full text of the publication

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