Autors: Alexandrova, S. P., Mikhailova, V. E., Kobilarov, R. G., Halova, E. Y.
Title: “Formation of thin SiOxNy films on Si by ion implantation”
Keywords: Silicon, Silicon oxynitride, Ion implantation, Thermal oxidation

Abstract: In this study the possibility of thin SiOxNy films formation on Si by N+ implantation followed by thermal oxidation is discussed. The nitrogen profiles in the silicon substrate are evaluated through Monte Carlo simulations. The energy, ion fluence and implantation angle are varied in order to obtain films with different thicknesses. The energy was chosen in the range of 5 to 25 keV. The fluence was varied in the range of 1013 to 1016 cm-2. The implantation profile during the oxidation is modeled using standard diffusion equations. The oxidation temperature was taken to be 1000oC. The role of the defects formed during implantationin the oxidation process is discussed.

References

    Issue

    Electronics’2004, vol. 4, pp. 78-82, 2004, Bulgaria,

    Вид: пленарен доклад в международен форум