Autors: Alexandrova, S., Szekeres, A., Halova, E. Y.
Title: „Defects in SiO2/Si Structures Formed by Dry Thermal Oxidation of RF Hydrogen Plasma Cleaned Si”
Keywords: SiO2/Si Structures, Thermal Oxidation, RF Hydrogen Plasma,

Abstract: The present paper reports characterization of the defects in ultrathin (similar to 10 nm) oxides grown by low-temperature (850 degrees C) thermal oxidation of hydrogen plasma hydrogenated (100)Si and (111)Si substrates. Electrically active defects, studied by analyzing the frequency dispersion of the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics are dominated by distinct defects, related to interface traps with different localized energy levels in the Si bandgap, border traps and bulk Si traps. Precursors of the trapping centers are defects in a thin, less dense Si surface region containing voids, which is formed during hydrogenation and is incorporated into the growing oxide layer. Oxidation-induced stress level, evaluated from ellipsometric and electroreflectance data analysis, is in the order of 10(8) N/m(2).



    IOP Conf. Series: Materials Science and Engineering, vol. 15, 2010, United Kingdom, DOI 10.1088/1757-899X/15/1/012037

    Цитирания (Citation/s):
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    Вид: публикация в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Web of Science