|Autors: Halova, E. Y., Alexandrova, S., Szekeres A.|
Title: “Fixed oxide charge, interface traps and border traps in MOS structures, grown on plasma hydrogenated (100)-pSi”.
Keywords: Thermal SiO2, Plasma hydrogenation, Interface charges
Abstract: The subject of the present study is the interface region of MOS structures with oxides grown on (100)-pSi hydrogenated wafers. The hydrogenation was accomplished in an RF plasma, the Si substrates being either unheated or kept at 300 degrees C. The oxides were thermally grown in dry O-2 at 850 degrees C. Information was gained on the concentration of charged defects and their location in the Si/oxide interface region, from examination of the capacitance-voltage (C-V) frequency behaviour. A comparative analysis was performed on the electrically active defects for the structures, with different hydrogenation conditions. The concentrations of border traps were determined by analysis of the hysteresis of the C-V curves. The interface trap density profiles over the Si bandgap were investigated by a standard high frequency method from the 300 kHz C-V characteristics of the MOS structures. The intrinsic fixed oxide charges were determined from the transition frequencies of the interface trap
1. Salimy, S.; Challali, F.; Goullet, A.; Besland, M-P.; Carette, M.; Gautier, N.; Rhallabi, A.; Landesman, J. P.; Toutain S.; Averty D., “Electrical haracteristics of TiTaO Thin Films Deposited on SiO2/Si Substrates by Magnetron Sputtering“, ECS Solid State Lett. vol. 2, Issue 3, (2013), Q13-Q15, ISSN 21628750, doi: 10.1149/2.006303ssl - 2013 - в издания, индексирани в Scopus или Web of Science
Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science