Autors: Kaschieva, S., Halova, E. Y., Vlaikova, E., Alexandrova, S., Valcheva, E., Dmitriev, S.
Title: “Investigation of p-Type MOS Structure Irradiated with 23 Mev Electrons”
Keywords: C-V, G-V, I-V measurements, high-energy electron irradiation

Abstract: p-type silicon MOS structures were irradiated with 23 MeV electrons in vacuum for different durations. Capacitance-voltage (C/V), current-voltage (IN) and conductance-voltage (G/V) methods were used to investigate the changes in the electrical characteristic Of the MOS Structures after electron irradiation. Our results show that high-energy electron irradiation generates positive charges in the oxide and at the Si-SiO2 interface, which are frequency dependent. After electron irradiation, two kinds of interface traps Lire determined. The traps energy position evaluated by these three independent methods is very close to Ev + 0.16 eV and E-v + 0.36 eV. As these results are in a very good agreement with our earlier results, obtained by TSC and DLTS methods, the observed traps can be attributed to the boron- (V/B) and oxygen (V/O) vacancies complexes.



    Plasma Processes Polymers, vol. 3, issue 2, pp. 237-240, 2006, Germany, Doi 10.1002/ppap.200500080, ISSN 16128850

    Цитирания (Citation/s):
    1. Hockicko, P., Bury, P., Sidor, P., Kobayashi, H., Takahashi, M., Yanase, T., “Analysis of A-DLTS spectra of MOS structures with thin NAOS SiO2 layers”, Central European Journal of Physics, Vol 9, Issue 1, (2011), pp. 242-249, ISSN 16443608, Doi 10.2478/s11534-010-0038-4 - 2011 - в издания, индексирани в Scopus или Web of Science
    2. Ristić G.S., Vasović N.D., Kovačević M., Jakšić A.B., “The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)”, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 269, Issue 23, (2011), pp. 2703-2708, ISSN 0168583X, Doi 10.1016/j.nimb.2011.08.015 - 2011 - в издания, индексирани в Scopus или Web of Science
    3. Kaschieva, S.; Gushterov, A.; Angelov, Ch., “Formation of Si nanocrystals in ion implanted Si-SiO2 structures by MeV electron irradiation”, Journal of Physics: Conference Series,, Vol. 356, (2012), 012005, - 2012 - в издания, индексирани в Scopus или Web of Science
    4. Nesheva, D,, Dzhurkov, V., Šćepanović, M., Bineva, I., Manolov, E., Kaschieva, S., Nedev, N., Dmitriev, S. N., Popović, Z. V., “High energy electron-beam irradiation effects in Si-SiOx structures”, Journal of Physics: Conference Series, Vol. 682, Issue 1, (2016), ISSN 17426588, Doi 10.1088/1742-6596/682/1/012012 - 2016 - в издания, индексирани в Scopus или Web of Science
    5. Kaschieva, S., Angelov, Ch., Dimitriev, S.N., “High-dose MeV electron irradiation of Si-SiO2 structures implanted with high doses Si+”, Journal of Physics: Conference Series, Vol. 992, Issue 1, (2018), ISSN 17426588, Doi 10.1088/1742-6596/992/1/012059 - 2018 - в издания, индексирани в Scopus или Web of Science

    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science