Autors: Halova, E. Y., Alexandrova, S., Szekeres, A., Modreanu, M.
Title: “LPCVD-silicon oxynitride films: interface properties”
Keywords: silicon oxynitride, interface, LPCVD

Abstract: The interface properties of silicon oxynitride films prepared by low-pressure chemical vapor deposition at a temperature of 860 degrees C have been investigated analyzing the capacitance-voltage and ac conductance-voltage characteristics of the metal-SiOxNy-silicon capacitors. Consistent results for the interface trap density have been obtained from single frequency ac conductance technique, approximation CV method and from the interface density spectrum. The post-deposition annealing results in an improvement of the interface charge properties. The contribution of the interface traps to the estimation of the fixed oxide charge has been discussed which is important for the threshold voltage control in MOS devices.



    Microelectronics Reliability, vol. 45, issue 5, pp. 982-985, 2005, United Kingdom, Doi 10.1016/j.microrel.2004.11.011, ISSN 00262714

    Цитирания (Citation/s):
    1. Andricciola, P., Tuinhout, H.P., De Vries, B., Wils, N.A.H., Scholten, A.J., Klaassen, D.B.M., “Impact of interface states on MOS transistor mismatch”, 2009 IEEE International Electron Devices Meeting (IEDM), Technical Digest - International Electron Devices Meeting, IEDM, (2009), pp. 30.4.1-30.4.4, Article number 5424239, ISSN 01631918, ISBN 978-142445640-6, Doi 10.1109/IEDM.2009.5424239 - 2009 - в издания, индексирани в Scopus или Web of Science
    2. Li, YM, Cheng, H.W., “Random Interface-traps-induced electrical characteristic fluctuation in 16-nm-gate high-κ/metal gate complementary metal-oxide-semiconductor device and inverter circuit”, Jpn. J. Appl. Phys. Vol. 51, Issue 4, PART 2, (2012), Article number 04DC08, ISSN 13474065, Doi: 10.1143/JJAP.51.04DC08 - 2012 - в издания, индексирани в Scopus или Web of Science
    3. Zhang, X., Ptasinska, S., “Growth of silicon oxynitride films by atmospheric pressure plasma jet”, Journal of Physics D: Applied Physics Vol. 47, Issue 14, (2014), Article number: 145202, ISSN 00223727, Doi 10.1088/0022-3727/47/14/145202 - 2014 - в издания, индексирани в Scopus или Web of Science
    4. Kaghouche, B., Mansour, F., Molliet, C., Rousset, B., Temple-Boyer, P., “Investigation on optical and physico-chemical properties of LPCVD SiOxNy thin films”, EPJ Applied Physics, Vol 66, Issue 2, (2014), Article number: ap130550, ISSN 12860042, Doi 10.1051/epjap/2014130550 - 2014 - в издания, индексирани в Scopus или Web of Science
    5. Pampillón, M. A., Feijoo, P. C., Andrés, E. San, García, H., Castán, H., Dueñas, S., “Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates“, Semiconductor Science Technology, Vol. 30, Issue 3, (2015), ISSN 02681242, doi:10.1088/0268-1242/30/3/035023 - 2015 - в издания, индексирани в Scopus или Web of Science
    6. Arce, M.A.P., ”Gd2O3 on InP Substrates” - Book, “Growth of High Permittivity Dielectrics by High Pressure Sputtering from Metallic Targets” - chapter 8, pp 141-153, (2017), Doi 10.1007/978-3-319-66607-5_8 - 2017 - в издания, индексирани в Scopus или Web of Science
    7. Shi, Y.; He, L.; Guang, F.; Li, L.; Xin, Z.; Liu R., „A Review: Preparation, Performance, and Applications of Silicon Oxynitride Film“, Micromachines Vol. 10, Issue 8, Article number 552, (2019), ISSN 2072666X, Doi 10.3390/mi10080552 - 2019 - в издания, индексирани в Scopus или Web of Science
    8. Decosterd L., Topka K.C., Diallo B., Samelor D., Vergnes H., Senoc, F., Caussat B., Vahlas C., Menu M.-J., “An innovative GC-MS, NMR and ESR combined, gas-phase investigation during chemical vapor deposition of silicon oxynitrides films from tris(dimethylsilyl)amine”, Physical Chemistry Chemical Physics, (2021), Vol.23, Issue 17, pp. 10560-10572, ISSN 14639076, Doi 10.1039/d1cp01129d - 2021 - в издания, индексирани в Scopus или Web of Science
    9. Topka K.C.,Vergnes H.,Tsiros T., Papavasileiou P., Decosterd L., Diallo B.,Senoc, F., Samelor D., Pellerin N., Meni M.-J., Vahlas C., Caussat B., “An innovative kinetic model allowing insight in the moderate temperature chemical vapor deposition of silicon oxynitride films from tris(dimethylsilyl)amine”, Chemical Engineering Journal, Vol. 431, Issue 3, Article number 133350, (2021), ISSN 13858947, DOI 10.1016/j.cej.2021.133350 - 2021 - в издания, индексирани в Scopus или Web of Science
    10. Shao, Hua; Chen, Rui; Li, Junjie; Bai, Guobin; Li, Chen; Yan,Qi; Wei,Yayi.,“Modeling of SiN Inner Spacer Deposition in Gate-all-around Nanosheet FET Process”, Proceeding of SPIE-The International Soclety for Optical Engineering, Vol,12055, 8 pp, (2022), article number 1205502, Advances in Pattering Materials and Processes XXXIX 2022, Virtual, Onlineq, code 181435, ISSN 0277786X, ISBN 978-151064985-9, Doi 10.1117/12.2612445. - 2022 - в издания, индексирани в Scopus или Web of Science
    11. Shao, Hua, Chen, Rui, Dong, isong., Li, Chen, Yan,Qi, Fan, Taian, Wei, Yayi.,“High Accuracy Simulation of Silicon Oxynitride Film Grown by Plasma Enhanced Chemical Vapor Deposition”, IEEE Transactions on Semiconductor Manufacturing, Vol. 35, Issue 2, pp. 309-317, (2022), ISSN 08946507, Doi 10.1109/TSM.2022.3143838. - 2022 - в издания, индексирани в Scopus или Web of Science

    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание