|Autors: Alexandrova, S., Szekeres, A., Halova, E. Y., Lisovskyy, I., Litovchenko, V., Mazunov, D.|
Title: “Oxide and interface charges in thin SiO2 thermally grown on RF plasma-hydrogenated silicon”
Keywords: silicon thermal SiO2 , interface traps,hydrogen plasma
Abstract: A study of the defect centres, related to oxide charge and interface traps, induced in thin SiO2 layer by technological procedures has been made. Thermal oxidation of Si was performed in dry O-2 at a temperature of 850degreesC. The Si cleaning procedures included dry hydrogen plasma treatment at different substrate temperatures and standard RCA wet cleaning. Characterization of defects was performed by analyzing the frequency dispersion of the capacitance-voltage characteristics. The origin of the defects was assessed by analysis of the IR spectra through computer simulation of the oxide structure and AFM images.
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Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science