Autors: Alexandrova, S., Szekeres, A., Halova, E. Y., Lisovskyy, I., Litovchenko, V., Mazunov, D.
Title: “Oxide and interface charges in thin SiO2 thermally grown on RF plasma-hydrogenated silicon”
Keywords: silicon thermal SiO2 , interface traps,hydrogen plasma

Abstract: A study of the defect centres, related to oxide charge and interface traps, induced in thin SiO2 layer by technological procedures has been made. Thermal oxidation of Si was performed in dry O-2 at a temperature of 850degreesC. The Si cleaning procedures included dry hydrogen plasma treatment at different substrate temperatures and standard RCA wet cleaning. Characterization of defects was performed by analyzing the frequency dispersion of the capacitance-voltage characteristics. The origin of the defects was assessed by analysis of the IR spectra through computer simulation of the oxide structure and AFM images.

References

    Issue

    Vacuum, vol. 75, issue 4, pp. 301-305, 2004, United Kingdom, DOI 10.1016/j.vacuum.2004.03.011, ISSN 0042207X

    Цитирания (Citation/s):
    1. Lee, S., Ni, C-J., “A study of the effect of post-metal etch wet cleaning processes and silicon oxynitride film on charge induced corrosion of tungsten vias”, Materials Science in Semiconductor Processing, Vol. 13, Issue 5-6, (2010), pp. 315 – 319, ISSN 13698001, Doi 10.1016/j.mssp.2011.02.011 - 2010 - в издания, индексирани в Scopus или Web of Science
    2. Ristić, G.S., Vasović, N.D., Kovačević, M., Jakšić, A.B., “The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)”, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol 269, Issue 23, (2011), pp. 2703-2708, ISSN 0168583X, Doi 10.1016/j.nimb.2011.08.015 - 2011 - в издания, индексирани в Scopus или Web of Science
    3. Alexandrova, S., Szekeres, A.,”Nano-sized silicon oxide, thermally grown on plasma hydrogenated silicon”, Journal of Optoelectronics and Advanced Materials, Vol 11, Issue 9, (2009), pp.1284-1287, ISSN 14544164 - 2009 - в издания, индексирани в Scopus или Web of Science

    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science