Autors: Alexandrova, S., Szekeres, A., Halova, E. Y., Modreanu, M.
Title: “LPCVD-Silicon oxynitride films: Low-temperature annealing effects”
Keywords: silicon oxynitride, annealing charged defect centres

Abstract: The electrical properties of silicon oxynitride (SiOxNy) films on Si deposited by low-pressure chemical vapour deposition have been studied. The effect of annealing on SiOxNy films on the basis of frequency analysis of capacitance-voltage and conductance-voltage characteristics of metal-SiOxNy-silicon capacitors in the frequency range 1-300kHz was determined. The post-deposition annealing results in a decrease of the concentrations of the positive dielectric charge and defects in the silicon substrate. The nature of the dielectric charges is discussed.

References

    Issue

    Vacuum, vol. 69, issue 1, pp. 385-389, 2002, United Kingdom, DOI 10.1016/S0042-207X(02)00363-9, ISSN 0042207X

    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science