Autors: Александрова, С., Kaschieva, S., Halova, E. Y., Valcheva, E., Szekeres. A.
Title: “Sensitivity of hydrogen plasma-treated SiO2/Si structures to high energy electron irradiation”
Keywords: Plasma treatment, Electron irradiation, Si–SiO2 interfaces

Abstract: The radiation sensitivity of hydrogen plasma-treated thermal SiO2 is investigated by exposure of Al-SiO2-Si structures to high-energy electron beam irradiation. It has been shown that rf hydrogen plasma pre-irradiation treatment without heating of the substrates results in a slightly higher fixed oxide charge but the increase of the interface state density is more significant as compared to reference samples without plasma treatment. Pre-exposure to rf plasma with heating the substrates up to 300 degreesC shows radiation-induced degradation of the interface quality manifested by high values of the fixed oxide charge and the interface state density



    Vacuum, vol. 69, issue 1, pp. 103-106, 2002, United Kingdom, DOI 10.1016/S0042-207X(02)00315-9

    Цитирания (Citation/s):
    1. Krumpolec, R; Čech, J; Jurmanová, J; Ďurina,P; Černák, M), “Atmospheric pressure plasma etching of silicon dioxide using diffuse coplanar surface barrier discharge generated in pure hydrogen”, Surface and Coatings Technology, Vol. 309, (2017), pp. 301–308, doi.10.1016/j.surfcoat.2016.11.036 - 2017 - в издания, индексирани в Scopus или Web of Science

    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science