Autors: Szekeres, A., Halova, E. Y., Alexandrova, S., Modreanu. M.
Title: “Investigation of charged defects in LPCVD-SiOxNy thin films deposited on (111) Si”
Keywords: SiOxNy, defects, LPCVD

Abstract: The interface charged defects in amorphous silicon oxynitride (SiOxNy) films deposited on (111) Si have been investigated. The films were deposited by low-pressure chemical vapor deposition (LPCVD) at a temperature of 860°C and at a pressure of 400 mTorr, using a mixture of SiCl2H2-NH3-N2O. The study was based on the analysis of capacitance-voltage (C-V) characteristics taken at different test signal frequencies. The presence of different types of interface traps explains the observed strong frequency dispersion of the C-V curves. The observed densities of the charged defects are attributed to nitrogen incorporation at the SiOXNY/Si interface, which leads to suppression of defects generation.



    Proceeding of the International Semiconductor Conference, CAS, vol. 2, pp. 519-522, 2001, United States, DOI 10.1109/smicnd.2001.967519

    Вид: пленарен доклад в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science