Autors: Aleksandrova, M. P., G. Kolev., I. Cholakova., G. Bodurov.
Title: Photolithography versus lift off process for pattering of sputtered indium tin oxide for flexible displays
Keywords: Photolithography, sputtered indium tin oxide, flexible display

Abstract: Indium tin oxide (ITO) was deposited by RF sputtering on polyethylene terephthalate substrate as transparent electrode for flexible display applications. For patterning of the produced coatings in form of digits for seven-segmented indication conventional photolithography and lift off process were conducted. Electrophysical properties of the ITO films and images resolution were investigated before and after patterning and the influence of the exposure dose, etching solutions and stripping was estimated. After wet etching the sheet resistance increase from 66.5 Ω/square to 101.9 Ω/square, the undercut is 6μm for 2 mm wide segment, which is allowable for digital indication, but it is inapplicable to current pixel dimension of 9 μm. At lift off, there is no undercut, but ITO sheet resistance increase to 197 Ω/square and lower display quantum efficiency is expected at the expense of resolution, unrestricted from the process.

References

    Issue

    17th International School on Condensed Matter Physiscs, September 2nd - September 7th, 2012 Varna (Konstantin&Elena), Bulgaria, 2012, Bulgaria,

    Вид: постер/презентация в международен форум