|Autors: Alexandrova, S., Szekeres, A., Halova, E. Y.|
Title: “C–V and G–V characterization of defects in ultrathin SiO2 thermally grown on RF plasma-hydrogenated silicon”
Keywords: thermal SiO2, radiation-induced defects, interface traps oxide
Abstract: In the present study, results on the interface properties of ultrathin SiO2 thermally grown on RF plasmahydrogenated silicon structures are reported from a detailed study of the C-V and G-V characteristics taken at various frequencies. From frequency characterization, information is gained on the charged defects at the Si/SiO2 interface. The frequency dispersion properties reveal the presence of either interface traps or laterally inhomogeneous distribution of defect centers within the oxide near the interface Si/SiO2. The amount and nature of the defects depend on the substrate temperature during plasma exposure.
1. Szekeres, A; Alexandrova, S, “Low-temperature oxidation of hydrogen plasma cleaned crystalline Silicon”, CAS: 25th International Semiconductor Conference, Sinaia, Romania; 2002; Poceedings, Vols 1 and 2, Pages: 343-346 - 2001 - в издания, индексирани в Scopus или Web of Science
Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science