Autors: Halova, E. Y., Kojuharova, N., Alexandrova, S., Szekeres, A.
Title: ”Electrical characterization of thin nanoscale SiOx layers grown on plasma hydrogenated silicon”
Keywords: Thin SiOx layers, Plasma

Abstract: We analyzed the electrical characteristics of MOS structures with a SiOx layer grown on Si treated in plasma without heating. The hysteresis effect observed indicates the presence of traps spatially distributed into the oxide near the interface. The shift and the shape of the curves reveal a small oxide charge and low leakage currents, i.e. a high-quality dielectric layer. The generalized C-V curve was generated by applying the two-frequency methods on the C-V and G-V characteristics at frequencies in the range from 1 kHz to 300 kHz and by accounting for the series resistance and the leakage through the oxide layer. The energy spectra of the interface traps were calculated by comparing the experimental and the ideal theoretical C-V curves. The spectra showed the presence of interface traps with localized energy levels in the Si bandgap. These conclusions correlate well with the results on this oxide's mechanical stress level, composition and Si-O ring structure, as well as on the inte



    Journal of Physics: Conference Series, vol. 992, issue 1, 2018, United Kingdom, DOI 10.1088/1742-6596/992/1/012041, ISSN 17426588

    Вид: публикация в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus