Autors: Alexandrova, S., Szekeres, A., Halova, E. Y., Kojuharova, N.
Title: “Electrical parameters of thin nanoscale SiOx layers grown on plasma hydrogenated silicon”
Keywords: Thin SiOx layers, Electrical parameters

Abstract: In the present paper results are presented on electrical characterization of the interface Si/SiOx, formed by oxidation on Si wafers, previously exposed to rf hydrogen plasma. As a tool of investigations multiple frequency C-V and G-V measurements are applied. The data analysis was performed using two-frequency method to extract generalized frequency independent C-V characteristic. Interface trap densities were evaluated from the generalized C-V data by comparison with theoretical data for an ideal interface. A set of localized states, acting as interface traps, was found that characterize the interface of Si to substoichiometric SiOx, layer with x < 2. The dielectric constant of the oxides was calculated from the capacitance in accumulation of the generalized C-V curves. The thickness and the refractive index of the oxide layers were obtained from ellipsometric data analysis assuming the oxide-Si substrate as single layer system. From the data for the dielectric constant and refracti

References

    Issue

    Journal of Physics: Conference Series, vol. 558, 2014, United Kingdom, DOI 10.1088/17426596/558/1/012054, ISSN 17426588

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    Вид: пленарен доклад в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science