Autors: Alexandrova, S., Halova, E. Y., Szekeres, A., Vlaikova, E., Gartner, M., Anastasescu, M.
Title: “Annealing of Si surface region modified by plasma immersion implantation of nitrogen”
Keywords: Annealing, Si surface, plasma immersion

Abstract: In the present work, the formation of a nano-scale Si surface layer is studied after high-temperature annealing of Si modified by shallow plasma immersion implantation of nitrogen with fluences of 1016 - 1018 cm-2. The implanted profiles of the atomic (N+) and molecular nitrogen (N2+) are modeled by SRIM for different annealing durations taking into account the diffusion process. The presence of Si-O and Si-N bonds is established by Fourier (FTIR) spectral analysis and spectroscopic ellipsometry (SE). The refractive index value measured at 632.8 nm varies between 1.46 and 1.59, corresponding to a low y/x ratio. The models using VIS and IR ellipsometric data reveal formation of nanostructured SiOxNy layer with Si inclusions.



    Journal of Physics: Conference Series, vol. 356, 2012, United Kingdom, DOI 10.1088/1742-6596/356/1/012031, ISSN 17426588

    Цитирания (Citation/s):
    1. Kuryliuk, V.V.; Korotchenkov, O.A.; Tsybrii, Z.F.; Nikolenko, A.S., Strelchuk, V.V.,“Features of Stress State of Germanium Nanocrystals in SiOx Matrix”, Journal of Nano- and Electronic Physics, Vol. 7, Issue 1, (2015), pp. 5, Article number 01029, ISSN:2077-6772 - 2015 - в издания, индексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science