|Autors: Angelov, G. V., Nikolov, D. N., Dobrichkov, B. D., Spasova, M. L.|
Title: Characterization of 64-bit DRAM based on FinFETs and CNTFETs
Keywords: CNTFET, DRAM, FinFET, power consumption, time delay, 1T1C cell
Abstract: Abstract: A brief review of transistors for memory applications is presented. Designs of 64-bit DRAM circuits with FinFETs and CNTFETs as pass transistors are modeled. Based on simulations in the Cadence environment using the Spectre tool, their parameters are compared. The FinFET device is modeled in a bulk substrate, whereas the CNTEFT is based on the Stanford compact model that is publicly accessible. Results showed better performance of FinFET based designs over their CNTFET counterparts.
Вид: пленарен доклад в международен форум, публикация в реферирано издание, индексирана в Scopus