Autors: Toteva I., Andonova, A. V.
Title: Physical implementation, parasitic extraction and parameter comparison of LNA with two types of ESD protection structures
Keywords: Circuit simulation; CMOS integrated circuits; Electrostatic discharge

Abstract: The paper presents an equivalent circuit of LNA with different ESD protection structures, which are used to discharge the excess power. The two different circuits are physically implemented and extracted in 0.18μm CMOS technology. The goal is to realize LNA with ESD protection and to run post extract simulations, to see how parasitic elements influences of the LNA's work under certain conditions. The simulation results are compared and analyzed for two different types ESD protection structures. For presented circuit models in this work CADANCE design system is used.

References

    Issue

    36th International Spring Seminar on Electronics Technology, ISSE 2013, pp. 216-220, 2013, Romania, IEEE, DOI 10.1109/ISSE.2013.6648245

    Цитирания (Citation/s):
    1. 1. Rashmi S B,. Raghavendra B, Sanketh V, Low Noise Amplifier with Improved Gain and Reduced Noise-Figure in 90nm CMOS Technology, International Journal of Advanced Research in Science, Communication and Technology (IJARSCT), Volume 8, Issue 1, August 2021, pp. 85-94, ISSN (Online) 2581-9429, DOI: 10.48175/IJARSCT-1815 - 2021 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science