Autors: Mladenov, V. M., Kirilov, S. M.
Title: A Simplified Model of Tantalum Oxide Based Memristor and Application in Memory Crossbars
Keywords: tantalum oxide memristor , memristor memory crossbar , nonli

References

    Issue

    MOCAST 2021, pp. 1-4, 2021, Greece, IEEE, DOI 10.1109/MOCAST52088.2021.9493384

    Цитирания (Citation/s):
    1. Zaykov, I., “A modified metal-oxide memristor model for reconfigurable filters”, Proceedings of Technical University of Sofia, ISSN: 2738-8549, VOL. 72, NO. 2, https://doi.org/10.47978/TUS.2022.72.02.005, pp. 27 – 31. - 2022 - в български издания
    2. Nikolaidis, S. and Picos, R., 2022. MOCAST 2021. Technologies, 10(4), p.87. DOI 10.3390/technologies10040087 (Editorial) (Google Scholar, Web of Science) JCI 0.73. - 2022 - в издания, индексирани в Scopus или Web of Science
    3. Kyurkchiev, N. and Iliev, A., 2022. On a Hypothetical Model with Second Kind Chebyshev’s Polynomial–Correction: Type of Limit Cycles, Simulations, and Possible Applications. Algorithms, vol. 15, issue (12), pp. 1 – 14, https://doi.org/10.3390/a15120462, ISSN:1999-4893, (Scopus, Web of Science, Google Scholar) SJR 0.515 - 2022 - в издания, индексирани в Scopus или Web of Science
    4. Omar, E., Aly, H.H., Hassan, O.E. and Fedawy, M., 2024. “Empirical mathematical model based on optimized parameter extraction from captured electrohydrodynamic inkjet memristor device with LTspice model,” Journal of Computational Electronics, pp.1-18. ISSN 15698025, DOI 10.1007/s10825-024-02223-z (Web of Science, Scopus, Google Scholar) IF 2.2, SJR 0.294 - 2024 - в издания, индексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus