Autors: Mladenov, V. M., Kirilov, S. M.
Title: Analysis of temperature influence on titanium dioxide memristor characteristics at pulse mode
Keywords: titanium-dioxide memristor; charge carriers mobility; temper

References

    Issue

    Proceedings of the International Symposiumon Theoretical Electrical Engineering, pp. 1-6, 2013, Czech Republic, ISTET 2013

    Цитирания (Citation/s):
    1. Nafea, S.F., Dessouki, A.A. and El-Rabaie, S., 2015. Memristor Overview up to 2015. Menoufia Journal of Electronic Engineering Research, 24(1), pp.79-106. - 2015 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
    2. Ammula, H., Prasad, B. and Lakshmi, V., 2017. Mathematical Modelling and Analysis of Memristors with and without its Temperature Effects. International Journal of Electronics and Telecommunications, 63(2), pp.181-186. - 2017 - в издания, индексирани в Scopus или Web of Science
    3. Dubey, S.K., Reddy, A., Patel, R., Abz, M., Srinivasulu, A. and Islam, A., 2020. Architecture of resistive RAM with write driver. Solid State Electronics Letters, 2, pp.10-22. - 2020 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
    4. Haritha, A., Prasad, Y.B., Kamaraju, M. and Lakshmi, T.V., 2015. Analysis of Memristors with and without Temperature Effects. International Journal of Applied Engineering Research, 10(20), pp.41464-41470. - 2015 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Google Scholar