Autors: Cholakova, I. N., Takov, T. B., Tsankov R. Ts., Simonne N., Tzanova, S. S.
Title: Experimental Investigation of Adjacent Hall Structures Parameters
Keywords: Adjacent Hall sensors, offset compensation, voltage related sensitivity, 0.18µm CMOS technology

Abstract: Adjacent Hall microsensors, comprising a silicon substrate and four contacts, providing simultaneously two supply inputs and two differential outputs, are characterized. The voltage related sensitivity is in the order of 0.11T-1, and a cancellation method for offset compensation is used, achieving residual offset in the micro scale which is also compared to a single Hall plate.

References

    Issue

    World Academy of Science, Engineering and Technology, issue 71, pp. 1443-1446, 2012, France,

    Full text of the publication

    Вид: статия в списание, публикация в реферирано издание