| Autors: Asparuhova, K. K., Grigorova, T. G. Title: IGBT high accuracy behavioral macromodel Keywords: IGBT Behavioral Model References Issue
Copyright IEEE |
Цитирания (Citation/s):
1. Y Yang, Z Zhao, C Peng, X Li, Z Sun, X. Cui, An improved behavioral model for high-voltage and high-power IGBT chips, CSEE Journal of Power and Energy Systems , 06 October 2020, DOI: 10.17775/CSEEJPES.2020.01040 - 2020 - в издания, индексирани в Scopus или Web of Science
2. H Yassine, G Abdelghafour, E Adil, A SPICE IGBT Model with easy parameters extraction, Proceedings of the Third International Conference on Computing and Wireless Communication Systems, ICCWCS 2019, April 24-25, 2019, Faculty of Sciences, Ibn Tofaïl University -Kénitra- Morocco, Publisher EAI, ISBN 978-1-63190-181-2ISSN 2593-7642 - 2019 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science
3. Driss, A., Maalej, S., Zaghdoudi, M.C., Electro-Thermal Modeling of Power IGBT Module Cooled by A Heat Pipe Cooling System, Journal of Advanced Research in Fluid Mechanics and Thermal Sciences 86(1), pp. 105-122 - 2021 - в издания, индексирани в Scopus или Web of Science
4. Yang Y, Zhao Z, Peng C, et al. An Improved Behavioral Model for High-voltage and High-power IGBT Chips. CSEE Journal of Power and Energy Systems, 2023, 9(1): 284-292. https://doi.org/10.17775/CSEEJPES.2020.01040 - 2023 - в издания, индексирани в Scopus или Web of Science
Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus
