Autors: Grigorova, T. G., Asparuhova, K. K.
Title: Unified Method for Behavioral Modeling of IGBT
Keywords: IGBT Behavioral Model, Nonlinear capacitor modeling

References

    Issue

    ANNUAL JOURNAL OF ELECTRONICS, vol. 8, pp. 96-99, 2014, Bulgaria, ISSN 1314-0078

    Copyright ET2014

    Цитирания (Citation/s):
    1. Y Yang, Z Zhao, C Peng, X Li, Z Sun, X. Cui, An improved behavioral model for high-voltage and high-power IGBT chips, CSEE Journal of Power and Energy Systems , 06 October 2020, DOI: 10.17775/CSEEJPES.2020.01040 - 2020 - в издания, индексирани в Scopus и/или Web of Science
    2. Yang Y, Zhao Z, Peng C, et al. An Improved Behavioral Model for High-voltage and High-power IGBT Chips. CSEE Journal of Power and Energy Systems, 2023, 9(1): 284-292. https://doi.org/10.17775/CSEEJPES.2020.01040 - 2023 - в издания, индексирани в Scopus и/или Web of Science

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Google Scholar