| Autors: Sen, M. M., Balabozov, I. S., Yatchev, I. S., Ivanov, R. M. Title: Modelling of current sensor based on Hall effect Keywords: Current sensors; FEM modelling; Hall effect References Issue
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Цитирания (Citation/s):
1. Fan, H., Li, S., Nabaei, V., Feng, Q., Heidari, H. Modeling of Three-Axis Hall Effect Sensors Based on Integrated Magnetic Concentrator (2020) IEEE Sensors Journal, 20 (17), art. no. 9075213, pp. 9919-9927. DOI: 10.1109/JSEN.2020.2989325 - 2020 - в издания, индексирани в Scopus и/или Web of Science
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9. Goranov G., Aleksandrov A., Dimitrios K., Mironova G., Microprocessor System for Studying the Parameters of Dual-collector Bipolar Magnetic Transistor, (2019) 2019 International Conference on High Technology for Sustainable Development, HiTech 2019, art. no. 9128264, DOI: 10.1109/HiTech48507.2019.9128264 - 2019 - в издания, индексирани в Scopus и/или Web of Science
10. Lalwani A., Giparakis M., Arora K., Maharaj A., Levy A., Strasser G., Andrews A.M., Kock H., Senesky D.G., Effect of Geometry on the Frequency Limit of GaAs/AlGaAs 2-D Electron Gas (2DEG) Hall Effect Sensors, (2023) IEEE Sensors Letters, 7 (12), pp. 1 - 4, DOI: 10.1109/LSENS.2023.3320039 - 2023 - в издания, индексирани в Scopus и/или Web of Science
Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus и Web of Science