Autors: Кирилов С. М., Petrakieva, S. K., Mladenov, V. M.
Title: Analysis of RM, LM and CM circuits with one memristor and sources of a sine voltage and current
Keywords: Williams’s memristor, current source, computer simulation, h

Abstract: In this material, an introduction of the Williams’s memristor and its parameters is performed. The behavior of a circuit with one memristor and ideal sine current source is modeled with MATLAB. Three circuits including Resistor-Memristor (RM), Coil-Memristor (LM) and Capacitor-Memristor (CM) and with an ideal sine voltage source in series are discussed and analyzed using SIMULINK models. Based on this simulation, the basic characteristics of the memristor circuits are presented in graphical form. The harmonious structure of the current in the circuits studied is also performed. The extent of nonlinearity of Williams’s memristor is discussed too. Finally, some final conclusions about properties and applications of the Williams’s memristor and memristor circuits are made.



    Summer School Advanced aspects of Theoretical Electrical Engineering Sozopol'12, 2012, Bulgaria, Sozopol, Кинг

    Вид: публикация в национален форум