Autors: Rusev, R. P., Angelov, G. V., Ruskova, I. N., Gieva, E. E., Nikolov, D. N., Spasova, M. L., Hristov, M. H., Radonov, R. I.
Title: COMSOL Model of a Three-Gate Junctionless Transistor
Keywords: junctionless transistor, nanowire, TCAD, 3D strucutre model,

Abstract: Channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors (JLTs) are analyzed. The density-gradient effective mass tensor of the charge carriers is studied. The results obtained are used to indicate a compromise between performance and minimum dimensions for JLT sensor applications.

References

    Issue

    32nd International Conference on Microelectronics - MIEL 2021, September 12th – 14th , 2021, pp. 93-96, 2021, Serbia, ISBN 978-1-6654-4528-3

    Цитирания (Citation/s):
    1. P. Bikki, A. Ruchitha, P. Veena and N. Akash, "Characteristics of a Dual-Gate Junction-less Transistor," 2023 3rd International Conference on Intelligent Technologies (CONIT), Hubli, India, 2023, pp. 1-5, doi: 10.1109/CONIT59222.2023.10205754. - 2023 - в издания, индексирани в Scopus и/или Web of Science

    Вид: пленарен доклад в международен форум, индексирана в Scopus