Autors: Delibozov, N. G., Angelov, G. V., Rusev, R. P., Takov, T. B., Hristov, M. H.
Title: Modified DRAM cell design using high-k MOS capacitor
Keywords: high-k; HfO2-Ta2O5; 3T DRAM cell; Verilog-A

Abstract: In the present paper a modified 3T DRAM cell is simulated using a Verilog-A model of a high-k stack MOS capacitor from HfO2-Ta2O5. The results showed better performance than the original circuit.



    Proceedings of the 8th International Conference on Semicondunctor Micro- & Nanoelectronics (ICSMN-2011), pp. 218-222, 2011, Armenia,

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