Autors: Rusev, R. P., Angelov, G. V., Ruskova, I. N., Gieva, E. E., Nikolov, D. N., Spasova, M. L., Hristov, M. H., Radonov, R. I.
Title: Study of Nanowire Characteristics of a Junctionless Transistor Depending on the Gate Length
Keywords: junctionless transistor, nanowire, TCAD, 3D strucutre model, air sensor

Abstract: In the present paper we have studied the channel length influence on the nanowire parameters and characteristics at different gate voltages for applications in junctionless transistors. We have studied the density-gradient effective mass tensor of the charge carriers. The results obtained are described and analysed in order to find a compromise between performance and minimum dimensions.

References

    Issue

    Proceedings of the 28th International Conference Mixed Design of Integrated Circuits and Systems - MIXDES 2021, pp. 184-187, 2021, Poland, ISBN 978-83-63578-19-0

    Вид: пленарен доклад в международен форум, индексирана в Scopus