Autors: Ristic S., Takov, T. B., Angelov, G. V.
Title: Static Dielectric Constant of Silicon vs. Resistivity
Keywords: Static dielectric constant, Heavily doped silicon, Room temperature

Abstract: The static dielectric constant of the heavily doped silicon at room temperature is considered. By using phosphorus as an example, the existing expression for the static dielectric constant at low temperatures is recast into a form suitable for the application at room temperature. This is done by taking into account the contribution of non-ionized impurities at room temperature to the static dielectric constant behavior.

References

    Issue

    Proceedings of the 2nd International Conference on Challenges in Higher Education & Research, vol. 2, pp. 294-297, 2004, Bulgaria, ISBN 954-580-158-1

    Full text of the publication

    Вид: публикация в национален форум с межд. уч., публикация в реферирано издание