Autors: Mladenov, V. M.
Title: Advanced Memristor Modeling: Memristor Circuits and Networks
Keywords: modeling; memristor; window function; titanium dioxide; nonl

Abstract: The investigation of new memory schemes, neural networks, computer systems and many other improved electronic devices is very important for future generations of electronic circuits and for their widespread application in all the areas of industry. Relatedly, the analysis of new efficient and advanced electronic elements and circuits is an essential field of highly developed electrical and electronic engineering. The resistance-switching phenomenon, observed in many amorphous oxides, has been investigated since 1970 and is promising for inclusion in technologies for constructing new electronic memories. It has been established that such oxide materials have the ability to change their conductance in accordance to the applied voltage and memorizing their state for a long time interval. Similar behavior was predicted for the memristor element by Leon Chua in 1971.

References

    Issue

    MDPI, vol. 1, pp. 1-172, 2019, Switzerland, MDPI, ISBN 978-3-03897-103-0

    Цитирания (Citation/s):
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    Вид: монография/части от монография, индексирана в Google Scholar