Autors: Mladenov, V. M.
Title: A New Simplified Model and Parameter Estimations for a HfO2-Based Memristor
Keywords: hafnium dioxide memristor; memristor-resistor synapse; nonli

Abstract: The purpose of this paper was to propose a complete analysis and parameter estimations of a new simplified and highly nonlinear hafnium dioxide memristor model that is appropriate for high-frequency signals. For the simulations; a nonlinear window function previously offered by the author together with a highly nonlinear memristor model was used. This model was tuned according to an experimentally recorded current-voltage relationship of a HfO2 memristor. This study offered an estimation of the optimal model parameters using a least squares algorithm in SIMULINK and a methodology for adjusting the model by varying its parameters overbroad ranges. The optimal values of the memristor model parameters were obtained after minimizing the error between the experimental and simulated current-voltage characteristics. A comparison of the obtained errors between the simulated and experimental current-voltage relationships was made. The error derived by the optimization algorithm was a little bi



    Technologies, vol. 8, issue 1, pp. 1-13, 2020, Switzerland, MDPI Technologies, DOI 10.3390/technologies8010016

    Цитирания (Citation/s):
    1. Zhevnenko, D.A., Meshchaninov, F.P., Kozhevnikov, V.S., Shamin, E.S., Telminov, O.A. and Gornev, E.S., 2021. Research and Development of Parameter Extraction Approaches for Memristor Models. Micromachines, 12(10), p.1220. - 2021 - в издания, индексирани в Scopus или Web of Science
    2. Kirilov, S., I. Zaykov, “A metal oxide memristor-based oscillators and filters”, Proceedings of Technical University of Sofia, ISSN: 2738-8549, 2022, VOL. 72, NO. 2,, pp. 32 – 37. (Google Scholar) - 2022 - в български издания

    Вид: статия в списание, публикация в реферирано издание, индексирана в Web of Science