Autors: Angelov, G. V., Nikolov, D. N., Hristov, M. H.
Title: Technology and Modeling of Nonclassical Transistor Devices
Keywords: High carrier mobility, Multiple gate transistors, Non-classical devices, Short-channel effect, Strained Si channel, Technology advancement, Transistor architecture, Transistor structure

Abstract: This paper presents a comprehensive outlook for the current technology status and the prospective upcoming advancements. VLSI scaling trends and technology advancements in the context of sub-10-nm technologies are reviewed as well as the associated device modeling approaches and compact models of transistor structures are considered. As technology goes into the nanometer regime, semiconductor devices are confronting numerous short-channel effects. Bulk CMOS technology is developing and innovating to overcome these constraints by introduction of (i) new technologies and new materials and (ii) new transistor architectures. Technology boosters such as high-k/metal-gate technologies, ultra-thin-body SOI, Ge-on-insulator (GOI), AIII-BV semiconductors, and band-engineered transistor (SiGe or Strained Si-channel) with high-carrier-mobility channels are examined..

References

    Issue

    Journal of Electrical and Computer Engineering Open Access, vol. Volume 2019, 2019, pp. Article number 4792461, 2019, Iran, Hindawi Limited, DOI 10.1155/2019/4792461

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    Вид: публикация в международен форум, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus