Autors: Angelov, G. V., Spasova, M. L., Nikolov, D. N., Rusev, R. P.
Title: Study of p-type FinFETs' Parameter Variability Depending on Wafer Location
Keywords: 14 nm p-type FinFETs; parameter variability.

Abstract: Abstract – In this paper we study the variability of measured drain current, output characteristics and threshold voltage for 14-nm p-type FinFETs depending on their location on the silicon wafer – three positions on the wafer are considered. The results showed that the technology is steady with weak parameter variability depending on wafer position.



    , 2019, Bulgaria, Source Type: Conference Proceeding Original language: English DOI: 10.1109/ET.2019.8878503

    Вид: пленарен доклад в международен форум, публикация в реферирано издание, индексирана в Scopus