Autors: Mladenov, V. M.
Title: Analysis and Simulations of Hybrid Memory Scheme Based on Memristors
Keywords: memory scheme; hard-switching mode; memristor; modified wind

Abstract: The investigation of new memory schemes is significant for future generations of electronic devices. The purpose of this research is to present a detailed analysis of the processes in the memory elements of a memory section with memristors and isolating Metal Oxide Semiconductor (MOS) transistors. For the present analysis, a modified window function previously proposed by the author in another memristor model is used. The applied model is based on physical nonlinear current-voltage and state-voltage characteristics. It is suitable for illustration of the processes in the memristors for both writing and reading procedures. The memory scheme is simulated using a nonlinear drift model with an improved window function. The used model was previously adjusted according to the reference Pickett model. The memory circuit is analyzed for writing and reading information procedures. The memristor current-voltage relationship is compared to physical experimental characteristics and to results acq

References

    Issue

    Electronics, vol. 11, issue 7, pp. 1-11, 2018, Switzerland, MDPI AG, DOI 10.3390/electronics7110289

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    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science