Autors: Boycheva, S. V., Vassilev, V.S.
Title: Electrode-limited conductivity of amorphous chalcogenide thin films from the GeSe2-Sb2Se3-ZnSe system
Keywords: Chalcogenide thin films, Band-gap structure, Amorphous semiconductors



    Journal of Optoelectronics and Advanced Materials, vol. 4, issue 1, pp. 33-40, 2002, Romania, INOE, ISBN ISSN: 1454-4164

    Цитирания (Citation/s):
    1. Soraya, M.M., Shaaban, E.R., Awad, M.A., Hassan, H.S., Eman, M.I., Algarni, H. Effect of replacement of selenium by indium on the thermal stability and crystallization kinetics of quaternary Se90−x–Zn5–Te5–Inx glassy alloys (2018) Applied Physics A: Materials Science and Processing, 124 (2), art. no. 197, . DOI: 10.1007/s00339-018-1603-8 - 2018 - в издания, индексирани в Scopus или Web of Science

    Вид: статия в списание, публикация в издание с импакт фактор, публикация в реферирано издание, индексирана в Scopus и Web of Science