Autors: Mladenov, V. M.
Title: A New Simplified Model for HfO2-Based Memristor
Keywords: hafnium dioxide memristor, memristor-resistor synapse, nonli

Abstract: The main goal of this research is to propose a comprehensive analysis of a new simplified and highly nonlinear modified hafnium dioxide memristor model. For the computer simulations, a previously suggested by the author modified nonlinear window function together with a highly nonlinear drift memristor model is applied. This memristor model is adjusted according to experimental i-v relationship of HfO2 memristor. A PSpice model of the HfO2 memristor is proposed and simulated. The considered model is applied in a multilayer memristor-based neural network with bridge memristor-resistor synapses. The applied nonlinear i-v relation in a combination with the considered window function with high nonlinearity, unlike some basic models make possible applying the present model for transition-metal oxide-based memristors for high-level voltage signals.

References

    Issue

    8th International Conference on Modern Circuits and Systems Technologies, pp. 1-4, 2019, Greece, Institute of Electrical and Electronics Engineers Inc., DOI 10.1109/MOCAST.2019.8741953

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    Вид: постер/презентация в международен форум, публикация в реферирано издание, индексирана в Scopus и Web of Science