Autors: Mladenov, V. M., Kirilov, S. M.
Title: Advanced memristor model with a modified Biolek window and a voltage-dependent variable exponent
Keywords: memristor, nonlinear ionic dopant drift, modified Biolek window function, voltage-dependent exponent

Abstract: The main idea of the present research is to propose a new nonlinear ionic drift memristor model suitable for computer simulations of memristor elements for different voltages. For this purpose, a modified Biolek window function with a voltage-dependent exponent is applied. The proposed modified memristor model is based on Biolek model and due to this and to the use of a voltage-dependent positive integer exponent in the modified Biolek window function it has a new improved property - changing the model nonlinearity extent dependent on the integer exponent in accordance with the memristor voltage. Several computer simulations were made for soft-switching and hard-switching modes and also for pseudo-sinusoidal alternating voltage with an exponentially increasing amplitude and the respective basic important time diagrams, state-flux and i-v relationships are establish

References

    Issue

    Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska, vol. 2, pp. 15-20, 2018, Poland, IAPGOŚ, DOI 10.5604/01.3001.0012.0697

    Вид: статия в списание, публикация в реферирано издание, индексирана в Google Scholar