Autors: Kirilov, S. M., Mladenov, V. M.
Title: Analysis of a Passive Memristor Crossbar
Keywords: Hard-switching mode; Memristor memory crossbar; Modified window function; Nonlinear dopant drift; Parasitic sneak paths

Abstract: The purpose of the present research is to propose a detailed analysis of a fragment of a passive memristor memory crossbar. For computer simulations a previously proposed by the authors in another paper nonlinear dopant drift memristor model with a modified window function is now applied. The results obtained by the simulation are compared with experimentally recorded current-voltage relationships and with these derived by the use of several basic memristor models as well. A relatively good coincidence between the results is established. The fragment of a memristor memory crossbar is simulated for the procedures of writing, reading and erasing information in the memristor cells. The effect of the basic memristor parameters, as the ionic drift mobility, the ON and OFF resistances and the physical length of the element on its switching speed is discussed. After a number of simulations, it was established that due to the self-rectifying effect the parasitic sneak paths do not strongly in

References

    Issue

    Orient. J. Comp. Sci. & Techno, vol. 11, issue 1, pp. 4-11, 2018, India, OJCST, http://dx.doi.org/10.13005/ojcst11.01.02

    Вид: статия в списание, публикация в реферирано издание, индексирана в Google Scholar