Autors: Mladenov, V. M., Kirilov, S. M.
Title: A Nonlinear Memristor Model with Activation Thresholds and Variable Window Functions
Keywords: memristor; electric field; nonlinear dopant drift; window function; activation threshold

Abstract: The fundamental idea of the present research is to propose a new nonlinear drift memristor model suitable both for low- and high-intensity electric fields. The new model is based on the Generalized Boundary Condition Memristor Model (GBCM) and Joglekar model and it has several of their advantages. It is also able to switching automatically between several Joglekar window functions with different exponents in its operation process in accordance with the electric field intensity.

References

    Issue

    CNNA 2016; 15th International Workshop on Cellular Nanoscale Networks and their Applications, pp. 1-2, 2016, Hungary, VDE, ISBN ISBN:978-3-8007-4252-3

    Цитирания (Citation/s):
    1. Zaykov, I., “A modified metal-oxide memristor model for reconfigurable filters”, 2022, Proceedings of Technical University of Sofia, ISSN: 2738-8549, VOL. 72, NO. 2, https://doi.org/10.47978/TUS.2022.72.02.005, pp. 27 – 31. (Google Scholar) - 2022 - в български издания

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus