Autors: Mladenov, V. M., Kirilov, S. M.
Title: Memristor modeling in Matlab & PSpice
Keywords: Memristor; modeling; computer simulation; nonlinear dopant d

Abstract: The main purpose of the present investigation is to propose a new, modified Joglekar’s memristor model and to compare it with the Pickett model using several different window functions. The appropriate value of the exponent in the Joglekar’s window function is determined to approach the new model to the Pickett’s memristor model, which is based on practical experiments and measurements. The new memristor model is based on both Williams’, Joglekar’s and BCM models and it has their advantages - considerations of the boundary conditions for hard-switching mode and ability for representation the nonlinear dopant drift. The memristor model proposed here is tunable and correctly expresses the behavior of the memristor element for low- and high-intensity electric fields, and is appropriate for computer simulations of different memristor nanostructures.



    ECMS 2015, vol. 1, issue 1, pp. 432-437, 2015, Bulgaria, Proceedings 29th European Conference on Modelling and Simulation, DOI:10.7148/2015-0432

    Цитирания (Citation/s):
    1. Tiago Miguel Rebouço Pina, Development of Behavioral Models for Memristors - Thesis, Licenciado em Engenharia Electrotécnica e de Computadores - 2018 - от чужди автори в чужди издания, неиндексирани в Scopus или Web of Science

    Вид: публикация в международен форум, публикация в реферирано издание, индексирана в Scopus