Autors: Mladenov, V. M., Kirilov, S. M.
Title: A Memristor Model with a Modified Window Function and Activation Thresholds
Keywords: nonlinear dopant drift, modified window function, voltage-dependent exponent , activation thresholds

Abstract: In this research a new nonlinear dopant drift memristor model with a modified window function and activation thresholds is proposed. This model is appropriate for different types of the memristor voltage. For this purpose, a combination of a modified Biolek window function and Joglekar window function with a voltage-dependent exponent is used. The new memristor model is based on the Biolek model, the Joglekar model and the Generalized Boundary Condition Memristor (GBCM) model. The boundary effects are represented using a switch-based algorithm similar to those used in the GBCM model. As in the GBCM model, in the memristor model proposed here activation thresholds are applied. It has also an improved property for changing the ionic dopant drift nonlinearity extent in accordance with the memristor voltage. The proposed model could realistically represent the nonlinear dopant drift phenomenon. The offered relationship between the integer exponent in the modified window function and the m

References

    Issue

    2018 IEEE International Symposium on Circuits and Systems (ISCAS), pp. 1-5, 2018, Italy, IEEE, DOI: 10.1109/ISCAS.2018.8351429

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    Вид: постер/презентация в международен форум, публикация в реферирано издание, индексирана в Scopus и Web of Science